Heat transport by long mean free path vibrations in amorphous silicon nitride near room temperature
نویسندگان
چکیده
منابع مشابه
Room-temperature ballistic transport in III-nitride heterostructures.
Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the sh...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2013
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.87.214305